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InGaAs/InGaAsP/InP strained-layer quantum well lasers at about 2 micronsThe first successful operation of InGaAs strained layer quantum well (Sl-QW) injection lasers at about 2 microns is reported. The threshold current density and the external differential quantum efficiency of 5 microns wide and 800 microns long ridge waveguide lasers were 2.5 kA/sq cm and 6 percent, respectively. The devices had a reverse leakage current of less than 20 micro-A at -1 V indicating epitaxial layers with low defect density.
Document ID
19920068367
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Forouhar, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Ksendzov, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Larsson, A.
(JPL Pasadena, CA, United States)
Temkin, H.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 15, 2013
Publication Date
July 16, 1992
Publication Information
Publication: Electronics Letters
Volume: 28
Issue: 15, J
ISSN: 0013-5194
Subject Category
Lasers And Masers
Accession Number
92A50991
Distribution Limits
Public
Copyright
Other

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