The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effectsThe use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.
Lowry, Lynn E. (JPL Pasadena, CA, United States)
Macwilliams, Kenneth P. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Isaac, Mary (Aerospace Corp. Los Angeles, CA, United States)
August 15, 2013
January 1, 1991
Electronics And Electrical Engineering
Meeting: International SAMPE Electronics Conference