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The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effectsThe use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.
Document ID
19920069302
Document Type
Conference Paper
Authors
Lowry, Lynn E. (JPL Pasadena, CA, United States)
Macwilliams, Kenneth P. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Isaac, Mary (Aerospace Corp. Los Angeles, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Meeting Information
International SAMPE Electronics Conference(Los Angeles, CA)
Distribution Limits
Public
Copyright
Other