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Influence of the Dislocation Density on the Performance of Heteroepitaxial Indium Phosphide Solar CellsCalculations are made to study the dependence of heteroepitaxial InP solar-cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness are considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20 percent AM0 efficiency could be fabricated if dislocations are reduced to less than 100,000/sq cm.
Document ID
19920070532
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jain, R. K.
(NASA Lewis Research Center Cleveland, OH, United States)
Flood, D. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Energy Production And Conversion
Report/Patent Number
E-6656
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: October 7, 1991
End Date: October 11, 1991
Accession Number
92A53156
Distribution Limits
Public
Copyright
Other

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