Influence of the Dislocation Density on the Performance of Heteroepitaxial Indium Phosphide Solar CellsCalculations are made to study the dependence of heteroepitaxial InP solar-cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness are considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20 percent AM0 efficiency could be fabricated if dislocations are reduced to less than 100,000/sq cm.
Document ID
19920070532
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jain, R. K. (NASA Lewis Research Center Cleveland, OH, United States)
Flood, D. J. (NASA Lewis Research Center Cleveland, OH, United States)