Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H filmsDevice-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).
Document ID
19920070559
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Shing, Y. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Pool, F. S. (JPL Pasadena, CA, United States)
Essick, J. M. (Occidental College Los Angeles, CA, United States)