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Synthesis, Properties, and Applications Of Boron NitrideReport describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.
Document ID
19930000427
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Pouch, John J.
(NASA Lewis Research Center, Cleveland, OH.)
Alterovitz, Samuel A.
(NASA Lewis Research Center, Cleveland, OH.)
Date Acquired
August 16, 2013
Publication Date
July 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 7
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
LEW-15299
Accession Number
93B10427
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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