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Chemical-Vapor Deposition Of Silicon CarbideReport describes experiments in chemical-vapor deposition of silicon carbide by pyrolysis of dimethyldichlorosilane in hydrogen and argon carrier gases. Directed toward understanding chemical-kinetic and mass-transport phenomena affecting infiltration of reactants into, and deposition of SiC upon, fabrics. Part of continuing effort to develop method of efficient and more nearly uniform deposition of silicon carbide matrix throughout fabric piles to make improved fabric/SiC-matrix composite materials.
Document ID
19930000430
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Cagliostro, D. E.
(NASA Ames Research Center, Moffett Field, CA.)
Riccitiello, S. R.
(NASA Ames Research Center, Moffett Field, CA.)
Ren, J.
(DeAnza College)
Zaghi, F.
(San Jose State Univ.)
Date Acquired
August 16, 2013
Publication Date
July 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 7
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
ARC-13067
Accession Number
93B10430
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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