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Chemical Vapor Deposition Of Silicon CarbideLarge single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.
Document ID
19930000517
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Powell, J. Anthony
(NASA Lewis Research Center, Cleveland, OH.)
Larkin, David J.
(NASA Lewis Research Center, Cleveland, OH.)
Matus, Lawrence G.
(NASA Lewis Research Center, Cleveland, OH.)
Petit, Jeremy B.
(Sverdrup Technology, Inc.)
Date Acquired
August 16, 2013
Publication Date
September 1, 1993
Publication Information
Publication: Laser Tech. Brief.
Volume: 1
Issue: 1
Subject Category
Materials
Report/Patent Number
LEW-15377
Accession Number
93B10517
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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