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Improved Hall-Effect Sensors For Magnetic MemoriesHigh-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.
Document ID
19930000542
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Wu, Jiin-Chuan
(Caltech)
Stadler, Henry L.
(Caltech)
Katti, Romney R.
(Caltech)
Chen, Y. C.
(Michigan Univ.)
Bhattacharya, Pallab K.
(Michigan Univ.)
Date Acquired
August 16, 2013
Publication Date
September 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 9
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18628
Accession Number
93B10542
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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