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Record Details

Record 19 of 20673
Improved Hall-Effect Sensors For Magnetic Memories
Author and Affiliation:
Wu, Jiin-Chuan(Caltech)
Stadler, Henry L.(Caltech)
Katti, Romney R.(Caltech)
Chen, Y. C.(Michigan Univ.)
Bhattacharya, Pallab K.(Michigan Univ.)
Abstract: High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.
Publication Date: Sep 01, 1993
Document ID:
19930000542
(Acquired Dec 28, 1995)
Accession Number: 93B10542
Subject Category: ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number: NPO-18628
Document Type: NASA Tech Brief
Publication Information: NASA Tech Briefs (ISSN 0145-319X); 17; 9; P. 31
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: COMPUTER STORAGE DEVICES; HALL EFFECT; MAGNETIC STORAGE
Availability Source: National Technology Transfer Center (NTTC), Wheeling, WV
Availability Notes: Additional information available through: National Technology Transfer Center (NTTC), Wheeling, WV 26003, (Tel: 1-800-678-6882).
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