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Subsurface Growth Of Silicide Structures In SiliconTechnique shows promise for fabrication of novel electronic, optoelectronic, and electro-optical devices. Experiments demonstrated feasibility of growing microscopic single-crystal CoSi2 structures beneath surfaces of Si substrates.
Document ID
19930000732
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Fathauer, Robert W.
(Caltech)
George, Thomas
(Caltech)
Pike, William T.
(Caltech)
Schowalter, Leo
(Rensselaer Polytechnic Institute)
Date Acquired
August 16, 2013
Publication Date
November 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 11
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-18625
NPO-18624
Accession Number
93B10732
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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