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Analyzing Single-Event Gate Ruptures In Power MOSFET'sSusceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.
Document ID
19930000755
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, John A.
(Caltech)
Date Acquired
August 16, 2013
Publication Date
December 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 12
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18663
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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