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X-Ray-Diffraction Tests Of Irradiated Electronic Devices: IIReport describes research on use of x-ray diffraction to measure stresses in metal conductors of complementary metal oxide/semiconductor (CMOS) integrated circuits exposed to ionizing radiation. Expanding upon report summarized in "X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I" (NPO-18803), presenting data further suggesting relationship between electrical performances of circuits and stresses and strains in metal conductors.
Document ID
19930000808
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Shaw, David C.
(Caltech)
Lowry, Lynn E.
(Caltech)
Barnes, Charles E.
(Caltech)
Date Acquired
August 16, 2013
Publication Date
December 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 12
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18825
Accession Number
93B10808
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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