Thermoelectric properties of hot pressed p-type SiGe alloysThis paper presents the results of measurements of electrical resistivity, Seebeck coefficient, thermal conductivity, as well as Hall carrier concentration, and mobility, for hot pressed SiGe 80 at. pct Si-20 at. pct Ge (SiGe) thermoelectric materials containing 0.24-3.0 at. pct boron. The carrier concentration was varied by annealing and quenching at different high temperatures. Figure-of-merit, Z, was found to be 0.60 +/- 0.03 x 10 exp -3/K over a carrier concentration range from 1.8- 3.5 x 10 exp -20/cu cm. This result is very encouraging from a production standpoint, since the dopant concentration is not critical.
Document ID
19930029810
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bajgar, Clara (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Masters, Richard (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Scoville, Nancy (Thermo Electron Technologies Corp. Waltham, MA, United States)
Vandersande, Jan (JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Publication Information
Publication: In: Space nuclear power systems; Proceedings of the 8th Symposium, Albuquerque, NM, Jan. 6-10, 1991. Pt. 1 (A93-13751 03-20)