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Buffer layers for high-Tc thin films on sapphireBuffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.
Document ID
19930033066
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Wu, X. D.
(NASA Lewis Research Center Cleveland, OH, United States)
Foltyn, S. R.
(NASA Lewis Research Center Cleveland, OH, United States)
Muenchausen, R. E.
(NASA Lewis Research Center Cleveland, OH, United States)
Cooke, D. W.
(Los Alamos National Lab. NM, United States)
Pique, A.
(Neocera, Inc. College Park, MD, United States)
Kalokitis, D.
(NASA Lewis Research Center Cleveland, OH, United States)
Pendrick, V.
(NASA Lewis Research Center Cleveland, OH, United States)
Belohoubek, E.
(David Sarnoff Research Center Princeton, NJ, United States)
Date Acquired
August 15, 2013
Publication Date
August 1, 1992
Publication Information
Publication: Journal of Superconductivity
Volume: 5
Issue: 4
ISSN: 0896-1107
Subject Category
Electronics And Electrical Engineering
Accession Number
93A17063
Funding Number(s)
CONTRACT_GRANT: NAS3-25929
Distribution Limits
Public
Copyright
Other

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