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Carrier removal and defect behavior in p-type InPA simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.
Document ID
19930033179
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Drevinsky, P. J. (USAF, Phillips Lab. Hanscom AFB, MA, United States)
Date Acquired
August 15, 2013
Publication Date
December 1, 1992
Publication Information
Publication: Journal of Applied Physics
Volume: 72
Issue: 11
ISSN: 0021-8979
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other