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New class of Si-based superlattices - Alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) alloysSuperlattices consisting of alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) have been fabricated. This is accomplished by first growing a Si/Si(0.7)Ge(0.3) superlattice by molecular beam epitaxy, followed by Ar-ion milling to form mesa structures, and finally by immersion in HF:HNO3:H2O. This solution creates a porous structure similar to that created by anodic etching, and a high selectivity is observed for the conversion of the alloy layers relative to the Si layers. The degree of selectivity is found to depend on alloy-layer thickness and strain. Superlattices have been fabricated from 1-micron wide mesas with Si(0.7)Ge(0.3) layers fully converted to 5-nm thick porous amorphous material.
Document ID
19930033794
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Fathauer, R. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
George, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Jones, E. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Pike, W. T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Ksendzov, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Vasquez, R. P.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
November 9, 1992
Publication Information
Publication: Applied Physics Letters
Volume: 61
Issue: 19
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
93A17791
Distribution Limits
Public
Copyright
Other

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