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An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistorsThe temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFET's) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods reducing the gate current are discussed.
Document ID
19930038518
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Cunningham, Thomas J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fossum, Eric R.
(JPL Pasadena, CA, United States)
Baier, Steven M.
(Honeywell Systems and Research Center Bloomington, MN, United States)
Date Acquired
August 16, 2013
Publication Date
December 1, 1992
Publication Information
Publication: IEEE Electron Device Letters
Volume: 13
Issue: 12
ISSN: 0741-3106
Subject Category
Electronics And Electrical Engineering
Accession Number
93A22515
Distribution Limits
Public
Copyright
Other

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