Improved electrical properties of n-type SiGe alloysThe effect of changes in the carrier concentration and mobility for heavily doped n-type SiGe on the electrical power factor has been investigated. It has been shown that power factors of 37-40 microV/cm-K-squared can be achieved with carrier concentrations of 2.0 - 2.5 x 10 exp 20/cu cm and mobilities of 38-40 sq cm/V-sec. Many samples with suitable carrier concentration do not have high mobilities and some rationale for this behavior is presented. Initial results are presented on fabrication of n-type samples from ultrafine powders. The emphasis in this work is to achieve thermal conductivity reductions by adding inert particles to scatter midfrequency phonons.
Document ID
19930042031
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Scoville, A. N. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bajgar, Clara (Thermo Electron Technologies Corp. San Diego, CA, United States)
Vandersande, Jan (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fleurial, Jean-Pierre (JPL Pasadena, CA, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publication: In: IECEC '92; Proceedings of the 27th Intersociety Energy Conversion Engineering Conference, San Diego, CA, Aug. 3-7, 1992. Vol. 3 (A93-25851 09-44)