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Progress in doping of ruthenium silicide (Ru2Si3)Ruthenium silicide is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels.
Document ID
19930042033
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Vining, C. B.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Allevato, C. E.
(JPL Pasadena, CA, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publication: In: IECEC '92; Proceedings of the 27th Intersociety Energy Conversion Engineering Conference, San Diego, CA, Aug. 3-7, 1992. Vol. 3 (A93-25851 09-44)
Publisher: Society of Automotive Engineers, Inc.
Subject Category
Solid-State Physics
Accession Number
93A26030
Distribution Limits
Public
Copyright
Other

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