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Interface dependence of band offsets in lattice-matched isovalent heterojunctionsUsing a previously developed self-consistent dipole theory, we find that the interface dependence of band offsets for lattice-matched isovalent heterojunction is generally small. Specifically, we find the difference between the (001) and (110) band offsets for the common-anion heterojunctions AlP/GaP, AlAs/GaAs, AlSb/GaSb, and CdTe/HgTe to be, at most, 0.02 eV. An investigation of the various details in the calculations leads to an error estimate of +/-0.03 eV; the differences are therefore insignificant. For the noncommon-anion systems, the difference between two different bonding configurations of the (001) interface is noted. Although the differences between the various interfaces are found to be slightly larger than for the common-anion cases, the only significant difference is found to occur between the In-Sb and Ga-As (001) interfaces, where it is 0.1 eV. In this case, the (110) band offset lies midway between the two.
Document ID
19930048135
Document Type
Reprint (Version printed in journal)
Authors
Lambrecht, Walter R. L. (NASA Lewis Research Center Cleveland, OH, United States)
Segall, Benjamin (Case Western Reserve Univ. Cleveland, OH, United States)
Date Acquired
August 16, 2013
Publication Date
April 15, 1990
Publication Information
Publication: Physical Review B - Condensed Matter, 3rd Series
Volume: 41
Issue: 12
ISSN: 0163-1829
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: NSF PHY-87-0036P
CONTRACT_GRANT: N00013-86-K-0773
CONTRACT_GRANT: NAG3-954
Distribution Limits
Public
Copyright
Other