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Modeling of InP metalorganic chemical vapor depositionThe growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.
Document ID
19930049061
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Black, Linda R.
(NASA Langley Research Center Hampton, VA, United States)
Clark, Ivan O.
(NASA Langley Research Center Hampton, VA, United States)
Kui, J.
(NASA Langley Research Center Hampton, VA, United States)
Jesser, William A.
(Virginia Univ. Charlottesville, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1991
Publication Information
Publication: In: Crystal growth in space and related optical diagnostics; Proceedings of the Meeting, San Diego, CA, July 22, 23, 1991 (A93-33051 12-29)
Publisher: Society of Photo-Optical Instrumentation Engineers
Subject Category
Materials Processing
Accession Number
93A33058
Distribution Limits
Public
Copyright
Other

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