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New optical approaches to the quantitative characterization of crystal growth, segregation and defect formationElemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegregation analysis of GaAs and InP. NIR dark file illumination in transmission mode makes it possible to detect submicron precipitates in semiinsulating GaAs.
Document ID
19930049070
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Carlson, D. J.
(M/A-Com, Inc. Lowell, MA, United States)
Wargo, M. J.
(NASA Headquarters Washington, DC United States)
Cao, X. Z.
(NASA Headquarters Washington, DC United States)
Witt, A. F.
(MIT Cambridge, MA, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1991
Publication Information
Publication: In: Crystal growth in space and related optical diagnostics; Proceedings of the Meeting, San Diego, CA, July 22, 23, 1991 (A93-33051 12-29)
Publisher: Society of Photo-Optical Instrumentation Engineers
Subject Category
Materials Processing
Accession Number
93A33067
Funding Number(s)
CONTRACT_GRANT: F49620-87-C-0106
CONTRACT_GRANT: NAGW-1563
Distribution Limits
Public
Copyright
Other

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