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Characterization of the Bridgman crystal growth process by radiographic imagingElemental (Ge) and alloy (PbSnTe) crystal growth that is monitored via radiography to reveal both the interface position and the shape in real time is discussed for both seeded and unseeded growth. It is concluded that the interface position and the actual growth rate of a Bridgman grown crystal is dependent on the growth conditions. The actual growth rate which is a strong function of the degree of supercooling exceeded the pull rate by a factor of greater than two. The interface shape changed from concave to flat to convex during the growth.
Document ID
19930049079
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fripp, Archibald L.
(NASA Langley Research Center Hampton, VA, United States)
Debnam, W. J.
(NASA Langley Research Center Hampton, VA, United States)
Woodell, G. W.
(NASA Langley Research Center Hampton, VA, United States)
Berry, R. F.
(NASA Langley Research Center Hampton, VA, United States)
Simchick, R. T.
(NASA Langley Research Center Hampton, VA, United States)
Sorokach, S. K.
(NASA Langley Research Center Hampton, VA, United States)
Barber, P. G.
(NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1991
Publication Information
Publication: In: Crystal growth in space and related optical diagnostics; Proceedings of the Meeting, San Diego, CA, July 22, 23, 1991 (A93-33051 12-29)
Publisher: Society of Photo-Optical Instrumentation Engineers
Subject Category
Materials Processing
Accession Number
93A33076
Distribution Limits
Public
Copyright
Other

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