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Growth kinetics and characterizations of gallium nitride thin films by remote PECVDThin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.
Document ID
19930050561
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Choi, S. W.
(NASA Langley Research Center Hampton, VA, United States)
Bachmann, K. J.
(NASA Langley Research Center Hampton, VA, United States)
Lucovsky, G.
(North Carolina State Univ. Raleigh, United States)
Date Acquired
August 16, 2013
Publication Date
April 1, 1993
Publication Information
Publication: Journal of Materials Research
Volume: 8
Issue: 4
ISSN: 0884-2914
Subject Category
Solid-State Physics
Accession Number
93A34558
Funding Number(s)
CONTRACT_GRANT: NAG1-1100
Distribution Limits
Public
Copyright
Other

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