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Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlatticesWe present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.
Document ID
19930050658
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Sieg, R. M.
(Cleveland State Univ.; NASA, Lewis Research Center OH, United States)
Alterovitz, S. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Croke, E. T.
(NASA Lewis Research Center Cleveland, OH, United States)
Harrell, M. J.
(Hughes Research Labs. Malibu, CA, United States)
Date Acquired
August 16, 2013
Publication Date
April 5, 1993
Publication Information
Publication: Applied Physics Letters
Volume: 62
Issue: 14
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
93A34655
Distribution Limits
Public
Copyright
Other

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