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Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structuresAn ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.
Document ID
19930051700
Document Type
Reprint (Version printed in journal)
Authors
Alterovitz, Samuel A. (NASA Lewis Research Center Cleveland, OH, United States)
Sekula-Moise, Patricia A. (Spire Corp. Bedford, MA, United States)
Sieg, Robert M. (NASA Lewis Research Center Cleveland, OH, United States)
Drotos, Mark N. (NASA Lewis Research Center Cleveland, OH, United States)
Bogner, Nancy A. (Cleveland State Univ. OH, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publication: Thin Solid Films
ISSN: 0040-6090
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other