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Fabrication of luminescent porous silicon with stain etches and evidence that luminescence originates in amorphous layersSimple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.
Document ID
19930051901
Document Type
Conference Proceedings
Authors
Fathauer, R. W. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
George, T. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Ksendzov, A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lin, T. L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Pike, W. T. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Vasquez, R. P. (JPL Pasadena, CA, United States)
Wu, Z.-C. (Oak Ridge National Lab., TN; Rensselaer Polytechnic Inst. Troy, NY, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other