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Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin filmsThe dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.
Document ID
19930052587
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1002/amo.860010504
Authors
Macinnes, Andrew N. (NASA Lewis Research Center Cleveland, OH, United States)
Cleaver, William M. (NASA Lewis Research Center Cleveland, OH, United States)
Barron, Andrew R. (Harvard Univ. Cambridge, MA, United States)
Power, Michael B. (NASA Lewis Research Center Cleveland, OH, United States)
Hepp, Aloysius F. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publication: Advanced Materials for Optics and Electronics
ISSN: 1057-9257
Subject Category
Inorganic And Physical Chemistry
Accession Number
93A36584
Distribution Limits
Public
Copyright
Other

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