High-efficiency high-gain monolithic heterostructure FET amplifier at 31 GHz

A three-stage heterostructure FET monolithic amplifier has achieved a power-added efficiency of 36 percent with 200 mW output and 18 dB gain at 31 GHz. At a higher drain voltage, the output power increases to 280 mW (with 17.5 dB gain and 31 percent PAE) at a power density of 0.7 W/mm. The MMIC chip measures 2.63 x 1.35 sq mm and requires only a single drain bias and a single gate bias.