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A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT deviceA process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.
Document ID
19930053577
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1109/75.208565
Authors
Young, Paul G. (Toledo Univ. OH, United States)
Romanofsky, Robert R. (NASA Lewis Research Center Cleveland, OH, United States)
Alterovitz, Samuel A. (NASA Lewis Research Center Cleveland, OH, United States)
Mena, Rafael A. (NASA Lewis Research Center Cleveland, OH, United States)
Smith, Edwyn D. (Toledo Univ. OH, United States)
Date Acquired
August 16, 2013
Publication Date
April 1, 1993
Publication Information
Publication: IEEE Microwave and Guided Wave Letters
Volume: 3
Issue: 4
ISSN: 1051-8207
Subject Category
Electronics And Electrical Engineering
Accession Number
93A37574
Funding Number(s)
CONTRACT_GRANT: NAG3-1226
Distribution Limits
Public
Copyright
Other

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