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Record Details

Record 17 of 1269
Advanced Si IR detectors using molecular beam epitaxy
Author and Affiliation:
Lin, T. L.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Jones, E. W.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
George, T.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Ksendzov, A.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Huberman, M. L.(JPL, Pasadena, CA, United States)
Abstract: SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.
Publication Date: Jan 01, 1991
Document ID:
19930054393
(Acquired Dec 28, 1995)
Accession Number: 93A38390
Subject Category: INSTRUMENTATION AND PHOTOGRAPHY
Document Type: Conference Paper
Publication Information: In: Infrared technology XVII; Proceedings of the Meeting, San Diego, CA, July 22-26, 1991 (A93-38376 15-35); p. 135-139.; (SEE A93-38376)
Publisher Information: Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
NASA; Washington, DC, United States
Description: 5p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: DOPED CRYSTALS; HETEROJUNCTION DEVICES; INFRARED ABSORPTION; INFRARED DETECTORS; SILICON COMPOUNDS; BORON; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOELECTRIC EMISSION; TRANSMISSION ELECTRON MICROSCOPY
Imprint And Other Notes: In: Infrared technology XVII; Proceedings of the Meeting, San Diego, CA, July 22-26, 1991 (A93-38376 15-35), p. 135-139.
Miscellaneous Notes: Research sponsored by NASA and SDIO
Availability Source: Other Sources
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