Effect of process conditions and chemical composition on the microstructure and properties of chemically vapor deposited SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x)Subatmospheric pressure CVD processes have been developed to produce theoretically dense, highly pure, void-free and large area bulk materials, SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x). These materials are used for optical elements, such as mirrors, lenses and windows, over a wide spectral range from the VUV to the IR. We discuss the effect of CVD process conditions on the microstructure and properties of these materials, with emphasis on optical performance. In addition, we discuss the effect of chemical composition on the properties of the composite material ZnS(x)Se(1-x). We first present a general overview of the bulk CVD process and the relationship between process conditions, such as temperature, pressure, reactant gas concentration and growth rate, and the microstructure, morphology and properties of CVD-grown materials. Then we discuss specific results for CVD-grown SiC, Si, ZnSe, ZnS and ZnS(x)Se(1-x).
Document ID
19930055514
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Pickering, Michael A. (NASA Langley Research Center Hampton, VA, United States)
Taylor, Raymond L. (NASA Langley Research Center Hampton, VA, United States)
Goela, Jitendra S. (NASA Langley Research Center Hampton, VA, United States)
Desai, Hemant D. (Morton International, Inc. Woburn, MA, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publication: In: Chemical vapor deposition of refractory metals and ceramics II; Proceedings of the Symposium, Boston, MA, Dec. 4-6, 1991 (A93-39501 15-25)