NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Atomic probe microscopy of 3C SiC films grown on 6H SiC substratesThe surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.
Document ID
19930055857
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Steckl, A. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Roth, M. D.
(Cincinnati Univ. OH, United States)
Powell, J. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Larkin, D. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 16, 2013
Publication Date
May 17, 1993
Publication Information
Publication: Applied Physics Letters
Volume: 62
Issue: 20
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
93A39854
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available