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Morphological instability in epitaxially strained dislocation-free solid films - Linear stability theoryThe morphological instability of a growing epitaxially strained dislocation-free solid film is analyzed. An evolution equation for the film surface is derived in the dilute limit of vacancies based on surface diffusion driven by a stress-dependent chemical potential. From the time-dependent linear stability problem the conditions for which a growing film is unstable are determined. It is found that the instability is driven by the lattice mismatch between the film and the substrate; however, low temperatures as well as elastically stiff substrates are stabilizing influences. The results also reveal that the critical film thickness for instability depends on the growth rate of the film itself. Detailed comparison with experimental observations indicates that the instability described exhibits many of the observed features of the onset of the 'island instability'.
Document ID
19930059643
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Spencer, B. J.
(NASA Headquarters Washington, DC United States)
Voorhees, P. W.
(NASA Headquarters Washington, DC United States)
Davis, S. H.
(Northwestern Univ. Evanston, IL, United States)
Date Acquired
August 16, 2013
Publication Date
May 15, 1993
Publication Information
Publication: Journal of Applied Physics
Volume: 73
Issue: 10:00 PM
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
93A43640
Funding Number(s)
CONTRACT_GRANT: NSF DMR-88-21571
CONTRACT_GRANT: NSF DMR-89-57219
Distribution Limits
Public
Copyright
Other

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