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Resonant tunneling through mixed quasibound states in a triple-well structureA triple-well resonant-tunneling structure made from the In(0.53)Ga(0.47)As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasi-bound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.
Document ID
19930060830
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.109175
Authors
Brown, E. R. (NASA Headquarters Washington, DC United States)
Parker, C. D. (NASA Headquarters Washington, DC United States)
Calawa, A. R. (NASA Headquarters Washington, DC United States)
Manfra, M. J. (MIT Lexington, MA, United States)
Date Acquired
August 16, 2013
Publication Date
June 7, 1993
Publication Information
Publication: Applied Physics Letters
Volume: 62
Issue: 23
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
93A44827
Distribution Limits
Public
Copyright
Other

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