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Progress in silicon carbide semiconductor technologySilicon carbide semiconductor technology has been advancing rapidly over the last several years. Advances have been made in boule growth, thin film growth, and device fabrication. This paper wi11 review reasons for the renewed interest in SiC, and will review recent developments in both crystal growth and device fabrication.
Document ID
19930060968
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Powell, J. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Neudeck, P. G.
(Ohio Aerospace Inst. Brook Park, United States)
Matus, L. G.
(NASA Lewis Research Center Cleveland, OH, United States)
Petit, J. B.
(Sverdrup Technology, Inc. Brook Park, OH, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publisher: Materials Research Society
Subject Category
Electronics And Electrical Engineering
Accession Number
93A44965
Distribution Limits
Public
Copyright
Other

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