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Photoluminescence from narrow InAs-AlSb quantum wellsWe report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.
Document ID
19930062189
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Brar, Berinder
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kroemer, Herbert
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Ibbetson, James
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
English, John H.
(California Univ. Santa Barbara, United States)
Date Acquired
August 16, 2013
Publication Date
June 21, 1993
Publication Information
Publication: Applied Physics Letters
Volume: 62
Issue: 25
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
93A46186
Distribution Limits
Public
Copyright
Other

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