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Thermal spray forming of refractory sample ampoule cartridges for single crystal growth space furnacesA thermal spray process is being used to build up refractory metals and ceramics into a containment cartridge for high temperature, single crystal semiconductor growth experiments. This process uses high energy plasma inside a low pressure (100-200 torr) inert environment to apply layers of material onto a removable mandrel. A variety of materials are being characterized and evaluated against a demanding set of requirements, including high service temperature (1700 C), oxidation resistance, and resistance to liquid metal attack. Techniques to spray form refractory metals (tungsten, molybdenum, niobium, tantalum) and ceramics (alumina, boron nitride) are being developed in the Plasma Spray Cell at Marshall Space Flight Center. These plasma spray formed materials have been evaluated for mechanical properties, density, microstructure, and resistance to liquid metal attack. Forming techniques and the resultant mechanical and metallurgical properties will be presented.
Document ID
19930065638
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Zimmerman, Frank
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Poorman, Richard
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Holmes, Richard
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Mckechnie, Timothy
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Krotz, Phil
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Liaw, Yoon
(Rockwell International Corp. Rocketdyne Div., Huntsville, AL, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1993
Publication Information
Publication: In: TABES 93 - Annual Technical and Business Exhibition and Symposium, 9th, Huntsville, AL, May 11, 12, 1993, Submitted Papers (A93-49626 21-12)
Publisher: Huntsville Association of Technical Societies
Subject Category
Mechanical Engineering
Report/Patent Number
TABES PAPER 93-605
Accession Number
93A49635
Distribution Limits
Public
Copyright
Other

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