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Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cellsIndium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.
Document ID
19930071327
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Jain, R. K. (NASA Lewis Research Center Cleveland, OH, United States)
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Flood, D. J. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 16, 2013
Publication Date
August 15, 1993
Publication Information
Publication: Journal of Applied Physics
Volume: 74
Issue: 4
ISSN: 0021-8979
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Distribution Limits
Public
Copyright
Other