Growth and characterizaton of 3C-SiC and 6H-SiC films on 6H-SiC wafers

Single crystal SiC films were grown by CVD on vicinal (0001) SiC wafers cut from boules produced by the modified sublimation method. Wafers with tilt angles less than 0.5 deg yielded 3C-SiC; tilt angles of 3 to 4 deg resulted in 6H-SiC films. The surface morphology of these films, up to 24 microns thick, were investigated as a function of growth parameters such as the Si/C ratio in the input gases and the presence of dopant materials such as nitrogen and trimethylaluminum.