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Performance of Ge:Ga far infrared detectorsA systematic study was carried out of the properties of Ge:Ga photoconductive infrared detectors for wavelengths approx. 100 micron. The detectors studied were made from Ge:Ga with acceptor concentration N sub A approx. 2 x 10 exp 14/cu cm with both low compensation (10 exp -2) and ultralow compensation (10 exp -4). Noise measurements have been made as a function of background photon rate, bias voltage, and chopping frequency. Detective quantum efficiencies approaching unity have been observed over a side range of experimental parameters. Photocurrent has been measured as a function of voltage and temperature. Hall mobility and lifetime have been measured to determine their effect on detector properties. A small potential drop has been observed in nominally ohmic contacts produced by implantation of B ions.
Document ID
19930073191
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Hueschen, M. R.
(California Univ. Berkeley., United States)
Richards, P. L.
(California Univ. Berkeley., United States)
Date Acquired
August 16, 2013
Publication Date
August 1, 1983
Publication Information
Publication: NASA. Ames Research Center, Infrared Detector Technology Workshop
Subject Category
Optics
Accession Number
93N70638
Funding Number(s)
CONTRACT_GRANT: DE-AC03-76SF-00098
CONTRACT_GRANT: NSG-7205
CONTRACT_GRANT: NASA ORDER W-14606
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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