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Neutron transmutation doped Ge bolometersSome conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.
Document ID
19930073193
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Haller, E. E. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Kreysa, E. (Max-Planck-Inst. fuer Radioastronomie Bonn, Germany)
Palaio, N. P. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Richards, P. L. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Rodder, M. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Date Acquired
August 16, 2013
Publication Date
August 1, 1983
Publication Information
Publication: NASA. Ames Research Center, Infrared Detector Technology Workshop
Subject Category
Solid-State Physics
Accession Number
93N70640
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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