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Advanced p-MOSFET Ionizing-Radiation DosimeterCircuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.
Document ID
19940000251
Document Type
Other - NASA Tech Brief
Authors
Buehler, Martin G. (Caltech)
Blaes, Brent R. (Caltech)
Date Acquired
August 16, 2013
Publication Date
May 1, 1994
Publication Information
Publication: NASA Tech Briefs
Volume: 18
Issue: 5
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18878
Accession Number
94B10251
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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