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Record Details

Record 34 of 44510
Improved Reading Gate For Vertical-Bloch-Line Memory
Author and Affiliation:
Wu, Jiin-Chuan(Caltech)
Stadler, Henry L.(Caltech)
Katti, Romney R.(Caltech)
Abstract: Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.
Publication Date: Sep 01, 1994
Document ID:
19940000492
(Acquired Dec 28, 1995)
Accession Number: 94B10492
Subject Category: ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number: NPO-18615
Document Type: NASA Tech Brief
Publication Information: NASA Tech Briefs (ISSN 0145-319X); 18; 9; P. 64
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: BUBBLE MEMORY DEVICES; COMPUTER STORAGE DEVICES; MAGNETIC STORAGE
Availability Source: National Technology Transfer Center (NTTC), Wheeling, WV
Availability Notes: Additional information available through: National Technology Transfer Center (NTTC), Wheeling, WV 26003, (Tel: 1-800-678-6882).
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