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Improved Reading Gate For Vertical-Bloch-Line MemoryImproved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.
Document ID
19940000492
Document Type
Other - NASA Tech Brief
Authors
Wu, Jiin-Chuan (Caltech)
Stadler, Henry L. (Caltech)
Katti, Romney R. (Caltech)
Date Acquired
August 16, 2013
Publication Date
September 1, 1994
Publication Information
Publication: NASA Tech Briefs
Volume: 18
Issue: 9
ISSN: 0145-319X
Subject Category
ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number
NPO-18615
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.