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Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of SiLayers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.
Document ID
19940000663
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Fathauer, Robert W.
(Caltech)
George, Thomas
(Caltech)
Date Acquired
August 16, 2013
Publication Date
December 1, 1994
Publication Information
Publication: NASA Tech Briefs
Volume: 18
Issue: 12
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18836
Accession Number
94B10663
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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