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Making Porous Luminescent Regions In Silicon WafersRegions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).
Document ID
19940000664
Document Type
Other - NASA Tech Brief
Authors
Fathauer, Robert W. (Caltech)
Jones, Eric W. (Caltech)
Date Acquired
August 16, 2013
Publication Date
December 1, 1994
Publication Information
Publication: NASA Tech Briefs
Volume: 18
Issue: 12
ISSN: 0145-319X
Subject Category
ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number
NPO-18735
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.