NASA Logo, External Link
Facebook icon, External Link to NASA STI page on Facebook Twitter icon, External Link to NASA STI on Twitter YouTube icon, External Link to NASA STI Channel on YouTube RSS icon, External Link to New NASA STI RSS Feed AddThis share icon
 

Record Details

Record 78 of 5291
Epitaxial Deposition Of Germanium Doped With Gallium
Author and Affiliation:
Huffman, James E.(Rockwell International Corp.)
Abstract: Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.
Publication Date: Dec 01, 1994
Document ID:
19940000665
(Acquired Dec 28, 1995)
Accession Number: 94B10665
Subject Category: ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number: NPO-18961
Document Type: NASA Tech Brief
Publication Information: NASA Tech Briefs (ISSN 0145-319X); 18; 12; P. 38
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: EPITAXY; GALLIUM; GERMANIUM; VAPOR DEPOSITION
Availability Source: National Technology Transfer Center (NTTC), Wheeling, WV
Availability Notes: No additional information available: For specific technical questions contact TU Officer at Center of origin.
› Back to Top
Find Similar Records
NASA Logo, External Link
NASA Official: Gerald Steeman
Site Curator: STI Program
Last Modified: August 19, 2011
Contact Us