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InP solar cell with window layerThe invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.
Document ID
19940030724
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Jain, Raj K. (NASA Langley Research Center Hampton, VA, United States)
Landis, Geoffrey A. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 16, 2013
Publication Date
June 21, 1994
Subject Category
Energy Production And Conversion
Accession Number
94N35230
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,322,573|NASA-CASE-LEW-15606-1
Patent Application
US-PATENT-APPL-SN-955512

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