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Piezoresistive stress sensors on (110) silicon wafersStructural reliability of electronic packages has become an increasing concern for a variety of reasons including the advent of higher integrated circuit densities, power density levels, and operating temperatures. A powerful method for experimental evaluation of die stress distributions is the use of test chips incorporating integral piezoresistive sensors. In this paper, the basic equations needed for the design of stress sensors fabricated on the surface of (110) oriented silicon wafers have been presented. Several sensor rosette configurations have been explored, including the familiar three-element 0-45-90 rosette. Rosette designs have been found which minimize the necessary calibration procedures and permit more stress components to be measured. It has been established that stress sensors on the surface of (110) test chips are sensitive to four out of the six stress components at a point.
Document ID
19940036290
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kang, Y. L.
(NASA Headquarters Washington, DC United States)
Suhling, J. C.
(NASA Headquarters Washington, DC United States)
Jaeger, R. C.
(Auburn Univ. AL, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publication: In: International Congress on Experimental Mechanics, 7th, Las Vegas, NV, June 8-11, 1992, Proceedings. Vol. 1 (A94-12901 02-39)
Publisher: Society for Experimental Mechanics, Inc.
Subject Category
Instrumentation And Photography
Accession Number
94A12945
Funding Number(s)
CONTRACT_GRANT: NAGW-1192
Distribution Limits
Public
Copyright
Other

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