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Photovoltaic cells for laser power beamingTo better understand cell response to pulsed illumination at high intensity, the PC-1DC finite-element computer model was used to analyze the response of solar cells to pulsed laser illumination. Over 50% efficiency was calculated for both InP and GaAs cells under steady-state illumination near the optimum wavelength. The time-dependent response of a high-efficiency GaAs concentrator cell to a laser pulse was modelled, and the effect of laser intensity, wavelength, and bias point was studied. Designing a cell to accommodate pulsed input can be done either by accepting the pulsed output and designing a cell to minimize adverse effects due to series resistance and inductance, or to design a cell with a long enough minority carrier lifetime, so that the output of the cell will not follow the pulse shape. Two such design possibilities are a monolithic, low-inductance voltage-adding GaAs cell, or a high-efficiency, light-trapping silicon cell. The advantages of each design will be discussed.
Document ID
Document Type
Conference Paper
Landis, Geoffrey A. (Sverdrup Technology, Inc. Brook Park, OH., United States)
Jain, Raj K. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 17, 2013
Publication Date
January 1, 1992
Publication Information
Publication: Twelfth Space Photovoltaic Research and Technology Conference (SPRAT 12)
Subject Category
Distribution Limits
Work of the US Gov. Public Use Permitted.